Experimental Reliability Studies and SPICE Simulation for EEPROM at Temperatures up to 450°C

摘要

This article presents reliability studies of singlepolysilicon electrically erasable programmable read-only memory(EEPROM) cells at temperatures from 50°C to 450°C. The technicallychallenging measurements at elevated temperatures >2508Chave been carried out for accelerated reliability studies. Furthermore,a SPICE macro model has been extended to the widetemperature range to describe the retention and endurance performanceof the memory cell and to enable a better insight into thephysics involved.