Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Geinf0.92/infSninf0.08/inf-amp;#x03B4;-Layers at the tunneling junction

摘要

We presented first results on the fabrication and characterization of vertical Ge heterojunction GAA-TFETs with a Ge0.92Sn0.08-δ-layer at the tunneling junction with transistor body diameters from 10 µm down to 250 nm (pillar geometry).