Low Temperature Growth of Nanocrystalline Silicon Carbide Films

摘要

Hydrogenated silicon carbide films have been deposited at low substrate temperatures. Their structural and optical properties have been investigated by using ex-situ phase modulated spectroscopic ellipsometry (SE) and complemented with optical transmission measurements. The experimental SE spectra were reproduced by fitting the pseudo-dielectric function of μc- SIC:H by using the Tauc-Lorentz parametrization. Our results show clearly that an increase of T_s from 200°C to 300°C enhances the SiC crystalline fraction.