Structural and Electrical Properties of ZnTe Thin Films Deposited at Various Substrate Temperatures

摘要

The structural and electrical properties of ZnTe thin films were investigated as a function of substrate temperature. Vacuum evaporated thin films of Zinc Telluride (ZnTe) of 10 kA thickness have been deposited on ultrasonically cleaned glass substrates at various substrate temperatures (303 K, 373 K 448 K). Structural parameters were obtained using XRD analysis. It was observed that the films deposited were cubic in nature with a strong (111) texture. Electrical parameters (Hall Effect measurement) have been obtained and studied at various temperatures in the range 303-393 K. It is observed that Hall coefficient remains positive throughout the whole temperature range indicating that holes are the majority carriers. The results obtained from structural and electrical parameters study have been correlated and it is found that the thin films deposited at higher substrate temperatures possess increasingly good crystalline structure with improved electrical conductivity along with an increase in carrier concentration and mobility of carriers.