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First-principle study of Structural and Electronic properties of Ti-doped SnO_2

机译:Ti-Doped SnO_2结构和电子性质的第一原理研究

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The structural and electronic properties of Ti-doped SnO_2 with 6.25 at.% are investigated with the first principle calculations based on the density functional theory within the generalized gradient approximation. The calculation results indicate that the crystal structure of Sn_(0.9375)Ti_(0.0625)O_2 possesses a smaller volume; the bond length of Ti-O is shorter than that of Sn-O; the relative angle θ change value of Sn-O-Sn→Ti-O-Ti is about 1.07%. Ti-O bond possesses more covalent ingredient and stronger bond energy than Sn-O bond. After the replacement of one Ti atom, O atom bonded with Ti atom possessed fewer electrons, the ratio of charges possessed by Ti atom and O atom dose not agree with the stoichiometry of compound, create more holes at the top of VB of Sn_(0.9375)Ti_(0.0625)O_2, and lead to the increase of the conductivity.
机译:Ti掺杂SnO_2的结构和电子性质,具有6.25.%,通过基于广义梯度近似的密度函数理论的第一原理计算来研究。计算结果表明SN_(0.9375)TI_(0.0625)O_2的晶体结构具有较小的体积; Ti-O的键长度比SN-O短的长度短; SN-O-Sn→Ti-O-Ti的相对角度θ变化值约为1.07%。 Ti-O键具有比SN-O键更高的共价成分和更强的粘合能量。在更换一个Ti原子之后,用Ti原子粘合的O原子具有较少的电子,Ti原子和O原子剂量的电荷的比率与化合物的化学计量不一致,在VB的顶部产生更多孔(0.9375 )TI_(0.0625)O_2,导致电导率的增加。

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