Novel EUV Resist Materials and Process for 16 nm Half Pitch and Beyond - (PPT)

摘要

Material & process development for RLS improvement: New high Tg or high absorption resin shows good balance between LWR and sensitivity; Si-HM UL improves resolution and sensitivity; se agent improves resolution and LWR; EUVL with polymer blend DSA process improves sensitivity for CH process. Combination of material and process for ≤ 22 nm hp patterning: JSR EUV resist achieved 14 nm LS and 20 nm CH resolution on SEMATECH Berkeley MET; JSR EUV resist shows good RLS and LDCU performance for 2x nm hp generation on imec NXE.3100.