首页> 外文会议>International Conference on Manufacturing Science and Technology >Effects of La-Doping on Phase Structure and Electrical Properties of Pb(Mg_(1/3)Nb_(2/3))_(0.67)Ti_(0.33)O_3 Ceramic
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Effects of La-Doping on Phase Structure and Electrical Properties of Pb(Mg_(1/3)Nb_(2/3))_(0.67)Ti_(0.33)O_3 Ceramic

机译:La-掺杂对Pb相结构和电性能的影响(Mg_(1/3)Nb_(2/3))_(0.67)Ti_(0.33)O_3陶瓷

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La-doped Pb(Mg_(1/3)Nb_(2/3))_(0.67)Ti_(0.33)O_3 ceramics were fabricated by a two-stage sintering method from conventional raw materials. The effects of La doping on the phase structure and electrical properties of ceramics were investigated. X-ray diffraction analysis showed that the pyrochlore phase increased with the increase of La-doping level. The effects of La doping on the dielectric, ferroelectric and piezoelectric properties of the ceramics were also investigated. The results showed that La doping seriously weakened the electrical properties of the ceramics. The ceramics possess optimum properties (d_(33) = 239pC/N, P_r = 10.6μC/cm~2, E_c = 8.5 kV/cm, tanδ = 0.029, ε_r = 2250) when the doping level is low (x = 0.02).
机译:La掺杂的Pb(Mg_(1/3)Nb_(2/3))_(0.67)Ti_(0.33)O_3陶瓷通过来自常规原料的两级烧结方法制造。研究了La掺杂对陶瓷的相结构和电性能的研究。 X射线衍射分析表明,随着LA掺杂水平的增加,曲面脉冲相增加。还研究了La掺杂对陶瓷的电介质,铁电和压电性能的影响。结果表明,拉掺杂严重削弱了陶瓷的电气性质。陶瓷具有最佳特性(D_(33)= 239pc / n,p_r =10.6μc/ cm〜2,e_c = 8.5kv / cm,tanδ= 0.029,ε_r= 2250)当掺杂水平低时(x = 0.02) 。

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