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Ductile-brittle transition detection in scratching of single crystal silicon using charged particle emissions

机译:使用带电粒子发射划伤单晶硅的韧性脆性转变检测

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During machining of single-crystal silicon,material removal involves two modes ductile shear-based removal and brittle fracture-based removal.Ductile shear-based chip removal occurs when fracture is suppressed due to local stress conditions along with reduced chances of defect involvement and is desirable for achieving better surface integrity of the machined silicon wafer.In this work,we use charged particle emissions to identify mode of material removal(ductile or brittle)during scratching of a silicon wafer.Scratching tests were performed using a pin-on-disc tribometer setup with a conical diamond tip indenter,in which the wafer was held at an inclined position to achieve a varying-depth tapered scratch.The varying-depth scratch test was performed in such a manner that both ductile-to-brittle and brittle-to-ductile modes occur in a single scratch test.The charged particles emitted during the material deformation were collected using a Faraday plate mounted in the vicinity of the indenter and the intensity of the charged particles were measured using a sensitive femto/picoammeter.The scratch depth was measured using a 3D surface profiler and the mode of fracture was identified by examining crack density per unit length in a scanning electron microscope.These results were then correlated with the emission intensity signals.From the experimental results,a positive current intensity was observed for ductile mode of scratching and highly varying current intensity signal is observed during brittle mode of scratching.The results obtained were consistent over time and exhibited good repeatability.The present work indicates suitability of employing charge emission signals to detect mode of material removal during scratching of silicon.This work can be field-tested by conducting diamond turning experiments of silicon in real-time machining environment further testing the scope of use of charged particle emission to monitor real-time machining process.
机译:在加工单晶硅期间,材料去除涉及两种模式基于脱髓鞘的去除和脆性骨折的去除。由于局部应力条件抑制了裂缝以及缺陷受累的可能性而抑制了裂缝的基于碎屑的芯片去除。期望实现机加工硅晶片的更好的表面完整性。在此工作中,我们使用带电粒子排放来识别在硅晶片刮擦过程中识别材料去除(延展性或脆性)的模式。使用引脚盘进行陶动试验用锥形金刚石尖端压紧的摩擦计设置,其中晶片保持在倾斜位置以实现变化深度锥形划痕。以这种方式进行变化深度划痕试验,使得韧性至脆性和脆性 - 在单个划痕试验中发生延展模式。使用安装在IND附近的法拉第板来收集材料变形期间发出的带电粒子使用敏感的毫微微/微微脉冲测量,测量带电粒子的强度。使用3D表面分析器测量划痕深度,通过在扫描电子显微镜中检查每单位长度的裂缝密度来鉴定裂缝模式。这些结果是然后与发射强度信号相关联。从实验结果中,观察到施加的延展电流强度,并且在脆性划痕模式期间观察到高变化的电流强度信号。得到的结果随时间一致并表现出良好的可重复性。本作本作能够采用电荷发射信号来检测硅刮擦期间检测材料去除模式的适用性。这项工作可以通过在实时加工环境中进行硅的菱形转动实验进行现场测试,进一步测试带电粒子的使用范围发射监测实时加工过程。

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