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Some Aspects of Deposition Parameters of RF Sputtered Ferromagnetic Film Germane to the Study of Magnetoresistive Sensing Devices

机译:RF溅射铁磁膜缘沉积参数的一些方面与磁阻传感装置研究的研究

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The paper describes results of investigation on sputtered NiFe Films to determine the sputter deposition condition that could produce magnetic field sensors with the desired magnetic and magnetoresistive properties. The magnetic thin films materials used in such devices should have a low coercive force, a low anisotropy field and low magnetization dispersion, (alpha)_(50) with high magnetoresistance ratio. From the results presented, it is shown that that the most useful films for 82(percent)Ni-Fe composition are produced at 200 deg C-250 deg C moderate substrate temperatures. It is also possible to specify the substrate bias potential and sputter gas pressure sputter deposition conditions under which the 82(percent)Ni-Fe thin films may be employed for the production of magnetoresistine sensors with near optimum magnetic and magnetoresistive properties. The work also provide understanding of the effects on the magnetic properties of sputtered magnetic films that is very limited as current literature is almost entirely limited to evaporated magnetic films.
机译:本文描述了对溅射NiFe膜的研究结果,以确定可以产生具有所需磁性和磁阻性质的磁场传感器的溅射沉积条件。这种装置中使用的磁性薄膜材料应具有低矫顽力,低各向异性场和具有高磁阻比的低磁化分散,(α)_(50)。从所呈现的结果,表明,82(百分比)Ni-Fe组合物的最有用薄膜在200℃-250℃适度的衬底温度下产生。还可以指定基板偏置电位和溅射气体压力溅射沉积条件,其可以使用82(百分比)Ni-Fe薄膜用于生产具有近最佳磁性和磁阻性的磁阻传感器。该作品还提供了对溅射磁性薄膜的磁性的影响,其非常有限,因为电流文献几乎完全限于蒸发的磁性膜。

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