Electrical Characteristics and Microstructures of Pr_2O_3-dopecl Bi_4Ti_3O_(12) Thin Films

摘要

Pr_2O_3-doped bismuth titanate (Bi_(4-x)Pr_xTi_3O_(12): BPT) thin films with random oriention were fabricated on Pt/Ti/SiO_2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0..0 , 0.25, 1.0 and 1.25,1-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( P_r) and coercive field (E_c) of the BPT Film with x=0.75 were above 30μC/cm~2 and 75KV/cm, respectively.