Ferroelectric Properties and Microstructures of Bi_(4-x)Dy_xTi_3O_(12) Thin Films

机译：Bi_（4-x）Dy_xti_3O_（12）薄膜的铁电性能和微观结构

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Dy-doped Bi_4Ti_3O_(12) thin films were fabricated on Pt/Ti/SiO_2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi_(4-x)Dy_xTi_3O_(12) films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization (P_r) and coercive field (E_c) of the Bi_(4-x)Dy_xTi_3O_(12) Film with x=0.75 were 25μC/cm~2 and 85KV/cm , respectively.

机译：通过脉冲激光沉积技术在Pt / Ti / SiO_2 / Si基板上制造Dy掺杂的Bi_4Ti_3O_（12）薄膜，并研究了膜的结构和电性能。 XRD结果表明，所有BI_（4-X）DY_XTI_3O_（12）薄膜由具有良好发育的杆状晶粒的铋层结构的单相。具有X = 0.75的Bi_（4-X）DY_XTI_3O_（12）膜的剩余偏振（P_R）和矫顽磁场（E_C）分别为25μC/ cm〜2和85kV / cm。

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《Annual Meeting on Testing and Evaluation of Inorganic Materials》|2015年||共4页
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作者
B. Li; X. B. Liu; M. Chen;
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原文格式 PDF
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中图分类 TB3-532;
关键词
ferroelectric; film; bismuth titanate; doping;

机译：铁电;薄膜;钛酸铋;掺杂;

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4. Ferroelectric Properties and Microstructures of Bi_(4-x)Dy_xTi_3O_(12) Thin Films [C] . B. Li, X. B. Liu, M. Chen Annual Meeting on Testing and Evaluation of Inorganic Materials . 2015

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Ferroelectric Properties and Microstructures of Bi_(4-x)Dy_xTi_3O_(12) Thin Films

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