Blinking in Photoluminescence of InGaN Devices is Caused by Slow Beating of THz Vibrations of the Quantum Well

摘要

The photoluminescence from III-V wide band-gap semiconductors as InGaN is characterized by localized large intensity fluctuations, known as 'blinking', that, despite decades of research, is not yet completely understood. In structures where there is a three-dimensional confinement, as for example semiconductors nano-crystals, the phenomena is supposed to be related to temporary quenching due to highly efficient non-radiative recombination processes (for example, Auger). Nevertheless, in typical InGaN devices, the band structure is an infinitely wide quantum well, so the understanding of the blinking phenomenon remains elusive. We present experimental data and a model that suggests that the discussed optical fluctuations are a general phenomena caused by the slow beating between THz thermal vibrations of the Quantum Well. These minuscule displacements are occurring naturally all over the device, the displacements along the growth direction induce a modulation of the matrix elements that drives the optical emission process; this have measurable effect on the device photo-luminescence. In presence of impurities or gradient of concentration, the vibrations have locally slight frequency differences on adjacent domains, this give rise to a band of beats, and we observe the lower frequency tail of this band.