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Low temperature route for synthesis of cadmium selenide quantum dots and their application in fabricating a QD-LED

机译:用于合成硒化镉量子点的低温途径及其在制造QD-LED中的应用

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The present study describes the effect of ageing time during the synthesis of oleic acid capped cadmium selenide quantum dots synthesized by the hot injection route and their use in the fabrication of a hybrid quantum dot light emitting device (QD-LED). This hot injection process has been carried out at the lower synthesis temperature of 140°C compared to the conventional temperature of ~300°C. Fluorescent monodisperse quantum dots of size 3-5 nm and 8-10 nm have been obtained at an ageing time of 2 and 3 hours respectively. An attempt to fabricate a QD-LED has been carried out. Current versus voltage studies show a turn on voltage at 3.06 V with a current of ~ 87 nA.
机译:本研究描述了在通过热喷射途径合成的油酸覆盖镉硒化族量子点的合成期间的老化时间的效果及其在制造混合量子点发光器件(QD-LED)中的用途。与常规温度为约300℃,该热喷射过程在140℃的较低合成温度下进行。在2至3小时的老化时间中获得尺寸为3-5nm和8-10nm的荧光单分散量子点。已经进行了制造QD-LED的尝试。电流与电压研究显示在3.06 V的电压下电压,电流为〜87 NA。

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