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Reaction of Si(111) Surface with Saturated Hydrocarbon

机译:Si(111)表面与饱和烃的反应

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Reaction of Si(111) surface with saturated hydrocarbon such as methane (CH_4) and ethane (C_2H_6) was carried out in a gas source molecular beam epitaxy (GSMBE). After carbonization, structures formed on the surface were observed by in situ reflection high‐energy electron diffraction (RHEED). Structures transition formed on the surface were 7×7, δ‐7×7, 1×1, and SiC structures. In the case of CH_4, the Si surfaces were carbonized at 800?°C for 120 min (7.2×10~4?L) with a W‐filament of 2800?°C, and SiC layers were obtained. In the case of C_2H_6, the mixture of 7×7 and SiC structure was observed. Decomposition of hydrocarbon was characterized in quadrupole mass spectroscopy (QMS) measurements. An atomic force microscopy (AFM) image of the mixture of 7×7 and SiC shows a wandering shape. Whereas, the SiC layer shows a regular step. This result seems to be related to the different in the amount of CH_3 molecules on the surface.
机译:在气源分子束外延(GSMBE)中进行Si(111)表面与饱和烃如甲烷(CH_4)和乙烷(C_2H_6)的反应。在碳化之后,通过原位反射高能量电子衍射(RHEED)观察在表面上形成的结构。在表面上形成的结构转变为7×7,Δ-7×7,11×1和SiC结构。在CH_4的情况下,将Si表面在800Ω℃下碳化120分钟(7.2×10〜4·L),具有2800℃的W-灯丝,得到SiC层。在C_2H_6的情况下,观察到7×7和SiC结构的混合物。烃的分解表征在四极谱质谱(QMS)测量中。 7×7和SiC混合物的原子力显微镜(AFM)图像显示出漫游形状。虽然,SIC层显示了常规步骤。该结果似乎与表面上的CH_3分子的量不同。

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