Facile Approach for Preparing CdSe/CdTe Heterostucture Quantum Dots

摘要

This paper reports a simple strategy to synthesize CdSe/CdTe heterostucture Quantum Dots (QDs) via successive injection of selenium and tellurium precursors into cadmium precursor at 350°C. In typical process, it was found that the heterostucture QDs exhibited a totally new absorption and photoluminescence (PL) properties that are different from individual CdSe and CdTe properties. For example, its PL emissions Quantum Yield (QY) were triple of CdSe and five times of CdTe high quantum QY, the heterostucture QDs should be potential used in LED and solar cell applications.