Two-photon detection in a MQW GaAs laser at 1.55μm

机译：在1.55μm的MQW GaAs激光器中的双光子检测

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We report the first demonstration of two-photon photocurrent in a GaAs/AlGaAs multiple quantum well laser at 1.55 μm. We measure the device efficiency, sensitivity, as well as the two-photon absorption coefficient. The results show that the device has a strong potential for signal processing, autocorrelation and possibly two-photon source applications at sub-Watt power levels.

机译：我们在1.55μm下报告了GaAs / Algaas多量子孔激光器中的双光子光电流的第一次演示。我们测量设备效率，灵敏度以及双光子吸收系数。结果表明，该器件具有强大的信号处理，自相关和可能的双光子源应用在亚瓦功率水平的潜力。

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《Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference》|2009年||共2页
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D. Duchesne; L. Razzari; L. Halloran; R. Morandotti; A. J. SpringThorpe; D. N. Christodoulides; D. J. Moss;
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中图分类 TN24-53;
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Nonlinear Optics: four wave mixing; Optical devices: resonators;

机译：非线性光学器件：四波混合;光学装置：谐振器;

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专利

1. Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 mu m InGaAs/InGaAsP MQW and strained-MQW lasers [J] . Shimizu J., Yamada H. IEEE Photonics Technology Letters . 1991,第9期

机译：1.55μmInGaAs / InGaAsP MQW和应变MQW激光器的K因子，差分增益和非线性增益系数对光约束因子的依赖性
2. Dependence of high-speed properties on the number of quantum wells in 1.55 mu m InGaAs-InGaAsP MQW lambda /4-shifted DFB lasers [J] . Uomi K., Aoki M. IEEE Journal of Quantum Electronics . 1993,第2期

机译：1.55μmInGaAs-InGaAsP MQWλ/ 4位移DFB激光器中高速特性对量子阱数量的依赖性
3. Advantage of 1.55 mu m InGaAs/InGaAsP MQW-DFB lasers for reducing waveform degradation and dispersion penalty for 2.5 Gb/s long-span normal fiber transmission [J] . Uomi K., Murata A. IEEE Photonics Technology Letters . 1992,第6期

机译：1.55μmInGaAs / InGaAsP MQW-DFB激光器的优势在于可减少2.5 Gb / s大跨度正常光纤传输的波形劣化和色散损失
4. Two-photon detection in a MQW GaAs laser at 1.55μm [C] . D. Duchesne, L. Razzari, L. Halloran, Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference . 2009

机译：在1.55μm的MQW GaAs激光器中的双光子检测
5. 1.55 um aluminum gallium indium arsenide strained MQW laser diodes. [D] . Yang, Chi. 2009

机译：1.55 um铝镓铟砷应变MQW激光二极管。
6. 1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser [O] . Z. Y. Zhang, A. E. H. Oehler, B. Resan, -1

机译：1.55 µm InAs / GaAs量子点和高重复率量子点SESAM锁模激光器
7. InAlGaAs/InP MQW structures grown by MOVPE in nitrogen atmosphere for 1.55 µm VCSELs [O] . Mereuta A., Mircea A., Rudra A., 2004

机译：MOVPE在氮气氛中以1.55 µm VCSEL生长的InAlGaAs / InP MQW结构
8. Laser Radar 1996, Final Report. (Coherent and Direct Detection Laser Radars at1.55 mu m) (Slutrapport Laserradar 1996 (Koherent och Direktdetekterande Laser Radar vid 1.55 mu m)) [R] . Karlsson, C., Letalick, D. 1997

机译：激光雷达1996年，最终报告。（1.55微米的相干和直接探测激光雷达）（slutrapport Laserradar 1996（Koherent och Direktdetekterande Laser Radar vid1.55μm））

Two-photon detection in a MQW GaAs laser at 1.55μm

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