Pulsed Metalorganic Chemical Vapor Deposition of In-Polar and N-Polar InN Semiconductors on GaN/Sapphire for Terahertz Applications

摘要

Narrow bandgap (0.77eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.