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Low Power 60 dB Gain Range with 0.25 dB Resolution CMOS RF Programmable Gain Amplifier for Dual-band DAB/T-DMB Tuner IC

机译:低功率60 dB增益范围,具有0.25dB分辨率CMOS RF可编程增益放大器,用于双频DAB / T-DMB调谐器IC

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Low power CMOS RF digitally programmable gain amplifiers for dual-band (Band-III and L-Band) DAB/T-DMB receiver IC are implemented using 0.18 mum CMOS process. For a stable operation among large interference situation, it is required to have wide gain range and fine resolution in RF domain. In order to meet such requirements, various programmable gain amplifier architectures are proposed. Also employing a differential multiple gated transistor (DMGTR) technique which is a differential circuit gm" cancellation method, maximum 22 dB IIP3 improvement is obtained. The IC exhibits 60 dB gain range with 0.25 dB resolution, 2.7 dB NF, -14 dBm IIP3 and 42 dB voltage gain at 22 mW power consumption for L-Band case, 50 dB gain range with 0.25 dB resolution, 3 dB NF, -5 dBm IIP3 and 28 dB voltage gain for Band-III case at 16mW power consumption
机译:低功耗CMOS RF数字可编程增益放大器用于双频带(带III和L波段)DAB / T-DMB接收器IC使用0.18毫米CMOS工艺实现。 对于大的干扰情况之间的稳定操作,需要在RF域中具有广泛的增益范围和精细分辨率。 为了满足此类要求,提出了各种可编程增益放大器架构。 还采用差分多个门控晶体管(DMGTR)技术是差分电路GM“取消方法,获得最大22dB IIP3改进。IC表现出60 dB增益范围,0.25dB分辨率,2.7 dB NF,-14 dBm IIP3和 42 DB电压增益为22 MW功耗L频段外壳,50 dB增益范围,具有0.25dB分辨率,3 dB NF,-5 dBm IIP3和28 dB电压增益,适用于16MW功耗。

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