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Realization of nanowires using break junctions at room temperature

机译:在室温下使用断裂结的实现纳米线

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The unceasing scaling-down of electronic devices and components in ICs has raised the prospect of nano-scale devices, which have electrical and mechanical properties different from those at larger dimensions. The property which has attracted much of interest is the increasing role of quantum effects on electron transport at nano-level. The aim of this study was to realize nanowires using break junctions and to probe their quantum properties. There are many techniques used to investigate these quantum properties but mechanically controllable break-junction (MCB) technique is considered to be one of the most promising tools. In this technique, quantized conductance traces are acquired during the process of mechanically breaking a metallic contact. In the breaking process, two metal (gold) electrodes in contact with each other are slowly retraced due to which the contact area undergoes abrupt changes in its structural arrangement until a state is reached where only few bridging atoms are left. At this stage, the electrical conductance through this metallic contact is always found to be close to value of (12.9kΩ){sup}(-1) ≈ 7.75×10{sup}(-5) which is given by Landauer's formula 2e{sup}2/h N[1]. This value corresponds to one quantum unit of conductance and hence indicating single atom contact According to A.I.Yanson et al., one such channel corresponds to a constriction having thickness ≈λ{sub}F/2, where λ{sub}F is Fermi wavelength (≈5 A) [2]. Also, we know, diameter of a gold atom is ≈λ{sub}F/2. Hence a single atom constriction is observed. Adopting an averaging statistical approach, using many conductance traces, a histogram was plotted for the breaking process of a gold contact. From the histogram analysis, we came to a conclusion that the narrowest thickness of constriction that can be achieved is in the order of Fermi wavelength. Also, the single atom contact observed was stretched over a distance of few A before it finally broke. Hence, while pulling a singe atom contact between gold electrodes, a chain of atom was formed having thickness of 2.5 A.
机译:电子设备和IC中的组件的不断缩小已经提出了纳米级装置的前景,其具有与较大尺寸的电气和机械性能不同。吸引了大部分兴趣的财产是量子效应在纳米级对电子传输的作用越来越大。本研究的目的是使用断裂交叉点实现纳米线,并探测其量子特性。有许多技术用于研究这些量子特性,但是机械控制的断裂(MCB)技术被认为是最有前途的工具之一。在该技术中,在机械断开金属接触过程中获取量化的电导迹线。在断开过程中,彼此接触的两个金属(金)电极被缓慢地回到其结构布置中的突然变化,直到达到距离剩下的桥接原子剩余的状态。在此阶段,通过该金属接触的电导均靠近(12.9kΩ){sup}( - 1)≈7.75×10 {sup}( - 5)的值靠近{landauer的公式2e { sup} 2 / h n [1]。该值对应于一个量子电导单元,因此指示根据Aiyanson等人的单个原子接触。,一个这样的通道对应于具有厚度≈λ{sub} f / 2的收缩,其中λ{sub} f是fermi波长(≈5A)[2]。此外,我们知道,金色原子的直径是≈λ{sub} f / 2。因此,观察到单个原子收缩。采用使用许多电导迹线的平均统计方法,针对金接触的破碎过程绘制直方图。从直方图分析来看,我们得出结论:可以实现的最窄厚度是费米波长的顺序。而且,观察到的单个原子接触在距离最终突破之前的距离距离延伸。因此,在拉动金电极之间的单次原子接触的同时,形成具有2.5A的厚度的原子链。

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