Fabrication of Al-Doped ZnO Nanorod Array using Different Type and Thickness of Metal Contact

摘要

Al-doped ZnO nanorod arrays were synthesized on seed layer coated glass substrate using immersion method. Optimization on the metal contact was conducted whereby the effect different types and thicknesses of metal contacts to the electrical properties of the nanorod array films were investigated. For the optimization of metal contact types, platinum (Pt) displayed the best electrical properties with low resistance film. For the optimization of contact thickness, Pt was selected and the characterization showed that Pt with 90 nm has the best electrical properties with the lowest film resistance of 0.24 MQ. The structural properties of the film were characterized using FESEM and XRD to confirm the availability of ZnO nanorod arrays. The electrical properties of the films at different contact thicknesses were investigated using I-V measurement. Based on the measurement, it is observed that 90 nm contact thickness produce the lowest resistance film.