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Structural, Optical, and Electrical Properties of Ni-Doped ZnO Nanorod Arrays Prepared Via Sonicated Sol-Gel Immersion Method

机译:通过超声溶胶 - 凝胶浸渍法制备的Ni掺杂ZnO纳米槽阵列的结构,光学和电性能

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Nickel (Ni)-doped zinc oxide (ZnO) nanorod array films were synthesised using sonicated sol-gel immersion method. The FESEM images showed that the Ni-doped ZnO nanorod arrays possess hexagonal shape with average diameter about 120 nm and thickness about 1.10 μm. The Ni-doped ZnO nanorod arrays possess better transmittance properties with 3.27 eV of optical band gap energy and 40 meV of urbach energy. The current-voltage (I-V) measurement indicated that the conductivity of ZnO film slightly improved with Ni-doping. The doped film displayed good humidity sensing performance with sensitivity of 1.21.
机译:使用超声溶胶 - 凝胶浸渍法合成镍(Ni) - 掺杂的氧化锌(ZnO)纳米棒阵列膜。 FeSEM图像显示Ni掺杂的ZnO纳米棒阵列具有六边形形状,平均直径约为120nm和约1.10μm。 Ni掺杂的ZnO纳米座阵列具有更好的透射性能,具有3.27eV的光学带隙能量和40 meV的URBACH能量。电流电压(I-V)测量表明,ZnO膜的电导率与Ni-掺杂略有提高。掺杂薄膜显示出良好的湿度感测性能,灵敏度为1.21。

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