In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/cm~2 of current density and the etching time is from 10-40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.
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机译:在这项研究中,由于简单易于处理,通过使用阳极氧化方法制造用作氮探测器的多孔硅纳米结构。该方法使用电流密度20 mA / cm〜2,蚀刻时间为10-40分钟。使用I-V检测(电性能)和光致发光光谱分析多孔硅纳米结构的性质。从I-V测试中,样品PSIE40,灵敏度为25.4%,是PSIE40在10秒的曝光时间内的灵敏度。
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