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Structural and Electrical Properties of ZnO and SiO_2 doped ZnO Powder for Varistor Application

机译:用于压敏电阻应用的ZnO和SiO_2掺杂ZnO粉末的结构和电性能

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Pure zinc oxide (ZnO) and silica (SiO_2) doped ZnO nanopowders have been prepared using solid state method. SiO_2 were doped into ZnO at different weight percentage 1 and 3 wt.%. The structural and electrical properties of ZnO and SiO_2 doped ZnO powder have been characterized using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and electro source meter. From the results, the XRD pattern were compatible with ZnO phase structure. Based on the SEM images, the grain size of ZnO varistor is increased when doped with SiO_2. The obtained value of nonlinear coefficient (a) of undoped ZnO sample is low compared to SiO_2 doped ZnO varistor. The, a value is increased as the content of SiO_2 doped increases. The maximum value of a is at 3 wt.% of SiO_2 doped ZnO which is 1.734 that might be can enhanced the performance of varistor. Thus, the properties of ZnO varistor can be improved when doped with SiO_2.
机译:使用固态方法制备纯氧化锌(ZnO)和二氧化硅(SiO_2)掺杂的ZnO纳米粉末。将SiO_2以不同重量百分比1和3重量%掺杂到ZnO中。%。使用X射线衍射(XRD),扫描电子显微镜(SEM)和电源计,表征了ZnO和SiO_2掺杂ZnO粉末的结构和电性能。从结果,XRD图案与ZnO相结构相容。基于SEM图像,当掺杂有SiO_2时,ZnO变阻器的晶粒尺寸增加。与SiO_2掺杂ZnO变阻器相比,未掺杂的ZnO样品的非线性系数(A)的所得值低。随着SiO_2掺杂增加的增加,值增加了值。 A的最大值为3wt。掺杂ZnO的百分比为1.734,可以提高压敏电阻的性能。因此,当掺杂有SiO_2时,可以改善ZnO变阻器的性质。

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