Electrical Properties of Graphene Film for Counter Electrode in Dye Sensitized Solar Cells

摘要

A graphene counter electrode for dye-sensitized solar cell was prepared simply by drop casting method on a conducting FTO glass at room temperature. Raman spectroscopy was used to study the defection in the graphene films. The sheet resistance was also measured and recoded minimum value of 7.04 Q/d at 22.19μm thickness. The casted films show good adhesion to substrates with low defects. A DSSC based on graphene counter electrode demonstrates reasonable conversion efficiency of 2.78% with short circuit current of 7.60mA, open circuit voltage of 0.69V and fill factor of 0.52. The high conductivity and low defects render the prepared graphene dispersion for DSSCs' CE application.