A New Analytic Description of Short-Channel Effects in Fully Depleted Single Gate SOI MESFETs for Low Power VLSI Applications

摘要

In this paper, the potential variation in the channel obtained from analytical solution of two-dimensional (2-D) Poisson's equation is used to calculate the Drain Induced Barrier Lowering (DIBL) and threshold voltage of SOI MESFETs with uniform doping profile. The two dimensional potential distribution in the active layer of SOI MESFET is approximated as a parabolic function with suitable boundary conditions to obtain the bottom potential at Si/oxide layer interface. The minimum bottom potential is used to monitor the DIBL effect. Further, the model for the bottom potential is extended to derive an analytical model for threshold voltage of SOI MESFET. This model can be used for low power VLSI applications.