Dielectric Characterization and Microstructures of Pr{sub}6O{sub}11-Doped Bi{sub}4Ti{sub}3O{sub}12 Thin Films

摘要

Pr{sub}6O{sub}11-doped bismuth titanate and random oriented Bi{sub}xPr{sub}yTi{sub}3O{sub}12 (y = 0.3, 0.6, 0.9, 1.2) thin films were fabricated on Pt/Ti/SiO{sub}2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Pr doping into BIT caused a shift of the Curie temperature (T{sub}C) of the BIT from 675°C to 578, 517, 398, and 315°C for the films with y = 0.3, 0.6, 0.9, and 1.2, respectively. The experimental results indicated that Pr doping into BIT result in a remarkable improvement in dielectric properties. Raman analysis shows that Pr{sup}(3+) and Pr{sup}(4+) ions substitution only appears in A-sit.