Monte Carlo simulation of device structures with one-dimensional electron gas

摘要

In this article the results of calculation of electron scattering rates and the drift velocity of these particles in free standing in vacuum GaAs quantum wire, electron scattering rates via polar optical and acoustic phonons in transistor device structure based on GaAs-in-AlAs quantum wire versus gate voltage, the electric current in armchair single-wall carbon nanotube versus strength of electric field applied along the channel and temperature are presented.