Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE

摘要

We report on the growth of self-aligned InN nano-dots on nano-patterned GaN templates by electron cyclotron resonance plasma-excited molecular beam epitaxy (ECR-MBE). In the fabrication of the nano-dots, InN was grown on GaN templates with reticular patterns of holes, which were prepared by the focused ion beam (FIB) technique. The InN nano-dots were formed selectively at the holes, resulting in the reticular array of InN nano-dos. The size of InN dots was controlled by varying the hole-pitch and the growth temperature. Furthermore, the shape of InN dots improved by thermal annealing after the growth. We have succeeded in controlling the position and size of InN nano-dots on nano-patterned substrates. Typically, InN nano-dots with a diameter of 50nm and a height of 10nm were fabricated in 410°C growth.