Blue-green-red LEDs based on InGaN Quantum Dots by Plasma-assisted MBE using GaN QDs for Dislocation Filtering

摘要

In this paper, we report the development of blue-green-red LEDs by MBE based on InGaN quantum dots (QDs) and quantum wells in the active region, and GaN QDs in the nucleation layer for dislocation filtering. Self-assembled InGaN QDs and GaN QDs were grown in the Stranski-Krastanov mode. For the GaN QDs grown at 770°C, the height distribution of the dots shows a bimodal distribution, which can be attributed to the interaction of the GaN QDs with the threading dislocations. TEM and XRD studies indicate that GaN QDs in the nucleation region help threading dislocations to deviate and annihilate. The average dot height, diameter and density of the InGaN QDs were estimated to be 3nm, 30nm and 7×10{sup}10cm{sup}(-2), respectively. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to quantum confined Stark effect (QCSE). Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440nm, 560nm and 640nm with FWHM of 30nm, 87nm and 97nm, respectively, were grown and fabricated. The electroluminescence spectra of the green and red InGaN MQD LEDs show larger blue-shift with increasing injection current than the blue InGaN/GaN MQW LEDs.