Ferroelectric and Memory Properties of Pb(Zr_(0.30)Ti_(0.70))O_3 Thin Films Crystallized on PbTiO_3/Pt/SiO_2/Si Substrates by Hot Isostatic Pressing

摘要

It has been recently reported that postannealing under pressures greater than atmospheric pressure (=0.1 MPa) is very effective in crystallizing amorphous films and improving physical properties (ferroelectric properties and memory characteristics). In particular, PZT films with compositions of Pb(Zr_(1-x)Ti_x)O_3, where x=0.65-0.75, which have attracted much attention for applications in high-density and high-reliance lead type ferroelectric random access memories (FeRAMs) because of their large remanent polarization (P_r).