High coupling efficiency and high speed InP/InGaAs resonant-cavity enhanced photodetector with micro-pectinated carrier collected layer

摘要

High efficiency, long wavelengths InP/InGaAs resonant-cavity enhanced (RCE) Photodetector was fabricated. To circumvent the difficulty in achieving high reflective InP-based DBR, the Si/SiO2 DBR was evaporated as the bottom mirror of the cavity by using back illumination from the substrate. A quantum efficiency of 80% at 1.583um was achieved with an absorption layer thickness of only 0.2um. In addition, the Micro-pectinated Carrier-Collected Layer (MCCL) was fabricated by proton implantations, thus device capacitance can be reduced without decreasing of the illuminating area. The bandwidth was increased from 600MHz to 800MHz experimentally by formation of MCCL, without decreasing of the quantum efficiency.