NITROGEN CONTENT AND INTERFACE TRAP REDUCTION IN SIO_2/4H-SIC

摘要

The relationship between nitrogen content and interface trap density (D_(it)) in SiO_2/4H-SiC near the conduction band has been quantitatively determined. Nitridation using NO reduces D_(it) greater near the conduction band, but the effect saturates after ～2.4x10~(14) cm~(-2) of nitrogen. The results are consistent with a model in which these traps are produced by clusters with a near-continuum of energy levels. The passivation of these traps with nitrogen then proceeds by the dissolution of these clusters.