首页> 外文会议>The Annual Meeting of The American Ceramic Society >ELECTRIC FIELD-INDUCED INTERSECTIONS OF 90° DOMAIN WALLS IN TETRAGONAL FERROELECTRIC CRYSTALS
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ELECTRIC FIELD-INDUCED INTERSECTIONS OF 90° DOMAIN WALLS IN TETRAGONAL FERROELECTRIC CRYSTALS

机译:电场诱导四边形铁电晶体中90°域壁的交叉点

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Intersections of the permissible 90° domain walls in tetragonal crystals were analyzed and the fifteen combinations were classified into two major groups. Group A is characterized by a 90° intersecting angle and a <001> intersecting line while group B is characterized by a 60° intersecting angle and a <111> intersecting line. When viewed along the <001> direction of thin crystals, the projected images of these intersections appear in four configurations. Electrical charges due to the termination of domains and elastic distortion due to the tetragonality of the lattice structure are introduced at the intersections. Three out of the four configurations of intersections were experimentally identified. The one absent was interpreted as unfavorable under in-plane electric fields. The intersection was observed to lead to the formation of partial dislocations and microcracks. It is proposed that the atomic shifts during 90° domain switching initiate the dislocation formation and the stored elastic energy at intersections is responsible for the microcrack formation.
机译:分析了四边形晶体中允许的90°域壁的交叉点,将十五个组合分为两个主要组。 A组的特征在于90°交叉角度和与<001>相交线,而B组的特征在于60°交叉角度和12个交叉线。当沿着薄晶体的<001>方向观察时,这些交叉点的​​投影图像以四种配置出现。由于晶片结构的四极性引起的域终止和弹性变形引起的电荷在交叉点处引入。通过实验识别出四种交叉点的三种配置中的三个。缺席的被解释为在面内电场下不利。观察到交叉点导致部分脱位和微裂纹的形成。建议在90°域切换期间的原子移位发起位错形成,并且交叉点的储存弹性能量是负责微裂纹形成的原因。

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