STUDY OF TEMPERATURE DEPENDENCE OF TURN-ON VOLTAGES IN III-V HBTS

摘要

We report variation of collector and base currents with temperature from 80K-400K on InGaAs/GaAs and AlGaAs/GaAs HBTs. The results obtained showed clearly that, among all the material systems studied, the InP/ In0.53Ga0.47As HBTs have the lowest turn-on voltage (0.1V). This is in good agreement with the theoretical prediction. Although marked differences in the values of turn-on, Vturn-on for InGaAsand GaAs-based HBTs were observed, voltage-thermal feedback coefficients of Vturn-on for all devices, irrespective of their material systems, do not differ considerably.