首页> 外文会议>Symposium E, "Materials for high-temperature superconductor technologies" >Diffusion mechanism of cations and anions in cation-exchange process for fabrication of high-T{sub}c superconducting HgBa{sub}2CaCu{sub}2O{sub}(6+δ)films
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Diffusion mechanism of cations and anions in cation-exchange process for fabrication of high-T{sub}c superconducting HgBa{sub}2CaCu{sub}2O{sub}(6+δ)films

机译:阳离子交换过程中阳离子和阴离子的扩散机制,用于制备高T {} C超导HGBA {Sub} 2o {Sub}(6 +δ)膜

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We have investigated the diffusion mechanism of Hg and T1 cations in cation-exchange process that has been used successfully for fabrication of Hg-based high-T1 superconducting films. Scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) was employed to map the distribution of T1 and Hg cations in films quenched at different stages of the cation exchange process. SEMIEDS mappings showed that the nonuniform distribution of Hg is visible in micrometer size on the surface of samples quenched after short-time (~1Omin) Hg-annealing, but this nonuniformity disappears for longer-time (~45 min) Hg-annealing samples. This change could be ascribed to different stages in Hg diffusion -- the former is the early stage when Hg is concentrated in the channels and the latter Hg-cations have already diffuse to grains. Our experimental results hence suggest that Hg-cations channel through defects in the films then diffuse into grains along a-b planes and vise versa for T1-cations. The diffusion mechanism of anions (oxygen) in post annealing has also been discussed. Fluorine-doped Hg-1212 films were post annealed in flowing oxygen at 300 °C for several hours. Magnetic measurement has shown these samples are comprised pure overdoped Hg- 1212 phase with smooth and sharp transition below 120 K, but resistivity vs. temperature measurement shows a kink at 123 K. This implies that the optimally doped Hg-1212 phase with higher T{sub}c might be surrounded by overdoped Hg1212 phase and their contribution to magnetization is minimized, thus the possible diffusion mechanism for anions is also through grain boundaries at a much larger time scale compared to the cations.
机译:我们已经研究了阳离子交换过程Hg和T1阳离子已成功用于基于汞高T1超导薄膜的制造扩散机制。扫描电子显微镜/能量分散光谱法(SEM / EDS)被用来映射T1和Hg阳离子在阳离子交换过程的不同阶段猝灭膜的分布。 SEMIEDS映射表明汞的非均匀分布是在短时间(〜1Omin)汞退火后急冷的样品的表面上的微米尺寸可见的,但对于较长时间(〜45分钟)汞退火样品此不均匀性消失。这种变化可以归因于不同的阶段中的汞扩散 - 前者是早期时汞柱集中在通道和后者汞阳离子已经扩散到晶粒。因此,我们的实验结果表明,汞的阳离子通道通过在膜中的缺陷,然后扩散到沿A-B平面晶粒和反之亦然为T1-阳离子。在后退火阴离子(氧)的扩散机制进行了讨论。氟掺杂的汞-1212薄膜进行后在300℃下进行数小时在流动氧气退火。磁测量已经表明这些样品是由纯过量掺杂HG-1212相具有低于120K的光滑和锐利的过渡,但电阻率对温度的测量示出了在123 K.这扭结意味着最佳掺杂汞柱-1212相具有较高Ť{子}℃可能由过量掺杂Hg1212相包围和它们的磁化的贡献被最小化,从而为阴离子的可能扩散机制也是通过晶界在一个更大的时间尺度相比,阳离子。

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