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LONG-TIME-SCALE SIMULATIONS OF AL(100) CRYSTAL GROWTH

机译:al(100)晶体生长的长时间模拟

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We have carried out simulations of Al(100) crystal growth using a combination of classical dynamics simulations and a new long time scale simulation method based on harmonic transition state theory. Atoms are deposited using classical dynamics over a time interval of a few picoseconds, but once the system has thermalized, the long time interval in between deposition events, a millisecond, is simulated using an extension of the kinetic Monte Carlo method. Here, relevant transitions in the system are found on the fly and the need for a predetermined event table and lattice approximation are eliminated. For a given state of the system, the dimer method is used to search for the saddle points on the potential energy rim surrounding the local energy minimum. The Al(100) surface is found to grow remarkably smoothly, even at temperatures as low as 30 K. As multilayer structures start to form, low barrier events involving concerted displacement of a number of atoms tend to smoothen the surface.
机译:基于谐波转换状态理论的新的长时间刻度模拟方法,我们已经进行了Al(100)晶体生长的模拟。在几种皮秒的时间间隔内使用经典动力学沉积原子,但是一旦系统热化,使用动力学蒙特卡罗方法的延伸模拟沉积事件之间的长时间间隔,毫秒。这里,在飞行中找到系统中的相关转换,并且消除了对预定事件表和晶格近似的需要。对于系统的给定状态,二聚体方法用于搜索围绕局部能量最小的潜在能量边缘的鞍座点。发现Al(100)表面非常平滑地生长,即使在低至30k的温度下也会变得如此低。随着多层结构开始形成,涉及许多原子的齐齐欲的位移的低阻挡事件倾向于平滑表面。

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