This article is directed towards nanolithography, which is the unit process required to pattern nanostructures. While the critical dimension in the microelectronics industry is continually going down due to developments in photolithography, it is coming at the expense of exponential increase in lithography tool costs and rising photomask costs. Step and Flash Imprint Lithography (S-FIL) is a nano-patterning technique that not only results in significantly lower cost of the lithography tool and process consumables, but also appears to be at least as good as photolithography in other aspects of patterning costs. In this study, a comparison of S-FIL with Extreme Ultraviolet (EUV) photolithography technique is provided at the 50 nm node. Advantages and disadvantages of S-FIL for various application sectors are provided. Finally, cost of ownership (CoO) computations of S-FIL versus EUV is provided. CoO computations indicate that S-FIL may be the cost-effective technology in sub-100 nm domain, particularly for emerging devices that are required in low volumes.
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