Cu(In,Ga)Se2 Thin-Film Evolution During Growth from (In,Ga)2Se3 Precursors

摘要

We examined the Cu(In,Ga)Se2 thin-film growth from (In,Ga)2Se3 precursors and found that the evolution of the microstructure and intrinsic native defects depends on the compositional changes that occur as the film transitions from being Cu rich to In(Ga) rich.