Hydrogen with an energy of 300 eV was implanted into single crystalline CuInSe2 samples at temperatures of 200 °C and 300 °C during implantation.We found that the hydrogen is not limited to the expected implantation depth but diffuses into the bulk of the sample.The hydrogen concentration ranges from 101 H/cm in a depth of about 300 nm up to some 1021 H/cm3 next to the surface and resembles a diffusion profile.The hydrogen induced change of composition was not only at the surface,but also up to a depth of about 200 nm similar to that of the hydrogen profile.Mainly a Cu deficiency after hydrogen implantation could be observed and is explained as the passivation of V_(Cu) by hydrogen and the additional production of V_(Cu) by the induced band-bending.
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