Observation of Intel-diffusion in ZnO/CuInSe2 Heterostructures and its Effect on Film Properties

摘要

ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE).The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature.Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C.Zn indiffusion into the CIS substrate leads to characteristic changes in the photolumi-nescence (PL) properties,whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.