Electronic properties of chemically etched CdTe thin films: role of Te for back-contact formation

摘要

Improvement of electric hack contact formation is one of the major issues of the CdTe thin film solar cell research. Chemical etching of CdTe before metallization is accepted to improve contact formation. It is believed that a CdTe/Te contact is formed by this procedure leading to a Fermi level position in the CdTe close to the valence band maximum for low contact resistance. We have studied the electronic properties of chemically etched CdTe surfaces with photoelectron spectroscopy. Etching of the samples was performed in air ("ex-situ") as well as in an electrochemical setup directly attached to the UHV system ("in-situ"). The formation of a Te layer is clearly shown by (S)XPS In contrast to previous studies we could not detect the formation of a p-CdTe surface for different experimental conditions. The detected Fermi level position indicates still band bending and hence a blocking Schottky barrier.