SUPPRESSED LEAKAGE IN LOW TEMPERATURE RTA (700°C 30S) JUNCTIONS WITH BURIED EPITAXIAL Si/.,C,,

摘要

We have demonstrated the application of a buried epitaxial Sii-yCy (y = 0.07) layer to suppress the end-of-range (EOR) defects related to low temperature RTA performed at 700°C for 30 s. The substitutional carbon was introduced epitaxially using low pressure chemical vapor deposition (LPCVD) followed by deposition of a silicon capping layer. The cross sectional transmission electron microscope (XTEM) images of the fabricated gated diodes revealed a substantial elimination of the EOR defects in the device with the buried carbon layers. The leakage characteristics of the device with carbon displayed leakage suppression of up to one order of magnitude. Further measurements on the temperature dependence of the junction leakage revealed a decrease in the activation energy of the generation current in the silicon device, which may be indicative of a higher defect density.