STRAIN EFFECTS ON TRANSIENT ENHANCED DIFFUSION AND DEACTIVATION OF ARSENIC IMPLANTED IN SILICON

摘要

In order to exploit fully the advantages of strain engineering in advanced CMOS technology, it is important to understand the effects of strain on dopant activation and diffusion. Experiments on the thermal equilibrium diffusion of dopants incorporated epitaxially at low concentrations into strained Si layers have shown significant strain effects. However, at present very little is known about the impact of strain on the complex phenomena of transient enhanced diffusion and activation occurring during annealing of high-dose dopant implants. We present first results on the effects of strain on these phenomena in the case of As-implanted ultrashallow junctions.