PROPERTIES OF Ru/Hf{sub}xSi{sub}(1-x)O{sub}y/Si MOS GATE STACK STRUCTURES GROWN BY MOCVD

摘要

Capacitance-voltage characteristics of the Ru/Hf{sub}xSi{sub}(1-x)O{sub}y/Si gate stack with Hf{sub}xSi{sub}(1-x)O{sub}y composition Hf/Si=75/25 and Hf/Si=50/50 were analyzed. The characteristics revealed high density of negative fixed charge N{sub}(ox)≈-3*10{sup}12cm{sup}(-2) in the oxide film. We have observed that the value of the fixed charge can be reduced by annealing in forming gas at temperatures above 470°C. Decrease of negative fixed can be explained by generation of positively charged [Si{sub}2=OH]{sup}+ centers in the oxide layer. The stability of the Ru/Hf{sub}xSi{sub}(1-x)O{sub}y/Si gate stack was examined by rapid thermal annealing at temperatures up to 800°C.