EVALUATION OF RUTHENIUM PRECURSORS FOR THIN-FILM APPLICATIONS

摘要

Three ruthenium precursors (tricarbonyl(ri4-cyclohexadiene)-ruthenium, (ri6-benzene)('n4-cyclohexadiene)rutheniuni, 1-ethyl-l'-methyl -ruthenocene) were synthesized and isolated at greater than 99% purity. The properties of films deposited using these compounds were examined by scanning electron microscopy (SBM) and sheet resistance measurements. 1-ethyl-l'-methylruthenocene was routinely used to deposit ruthenium films by chemical vapor deposition (CVD) and atomic layer deposition (ALD) using oxygen as the coreactant.