A new planarization CMP tecnology for multi-level interconnection of ULSI devices - Proposal of A New Pad and Its CMP Characteristics -

摘要

The applied technology of the ultra-precision polishing, a proven technology in the mirror-surface finish of bare silicon wafers, has won attentions from the industry as a global planarization method on a wafer level. This is termed as "Planarization CMP (Chemical Mechanical Polishing)", and recently introduced increasingly into the device fabrication processes where it processes SiO_2 films used as a multilevel dielectric layer and metals such as W, Al or Cu as a material for an interconnection metal. Stable CMP characteristics are the must, to say nothing of planarity and uniformity. It is also important to optimize consumables such as slurries and pads, and in particular, the development of pads which can easily discharge debris and hardly get loaded, thus easy to be cleaned is very much waited.