Aspects of gas phase chemistry during chemical vapor deposition of Ti-Si-N thin films with Ti(NMe{sub}2){sub}4 (TDMAT), NH{sub}3, and SiH{sub}4

摘要

Silane activation, predominantly in the gas phase, has been observed during the chemical vapor deposition of Ti-Si-N thin films using Ti(NMe{sub}2){sub}4, tetrakis(dimethylamido)titanium, silane, and ammonia at 450°C, using molecular beam mass spectrometry. The extent of silane reactivity was dependent upon the relative amounts of Ti(NMe{sub}2){sub}4 and NH{sub}3. Additionally, each TDMAT molecule activates multiple silane molecules. Ti-Si-N thin films were deposited using similar process conditions as the molecular beam experiments, and RBS and XPS were used to determine their atomic composition. The variations of the Ti:Si ratio in the films as a function of Ti(NMe{sub}2){sub}4 and NH{sub}3 flows were consistent with the changes in silane reactivity under similar conditions.