Parameters of substrates-single crystals of ZnTe and Cd_1-xZn_xTe(x<0.25), obtained by physical vapor transport technique (PVT)

摘要

It is shown that very high quality (in particular - very good real crystal structure) of the single crystals of ZnTe and Cd_1-xZn_xTe, intended to be substrates for MBE and other techniques of epitaxy, can be reached by an optimized physical vapor transport (PVT) technique. The obtained crystals are twin-free, the narrowness of the rocking curve nearly reaches the theoretical limit and the density of dislocations is low. The results of characterization of the crystals are presented. direct c 1999 Elsevier Science B.V. All rights reserved.