1.5 /spl mu/m InGaAs/InGaAsP/InP quantum dot lasers operating CW at room temperature

机译：1.5 / SPL MU / M INGAAS / INGAASP / INP量子点激光器在室温下操作CW

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CW operation of QD lasers emitting at /spl sim/1.5 /spl mu/m at room temperature have been demonstrated. J/sub th/ per QD stack of /spl sim/430 A/cm/sup 2/ is measured for broad area lasers with 5, 7, and 10 QD stacks.

机译：已经证明了在室温下发出AT / SPL SIM / 1.5 / SPL MU / M的QD激光器的CW操作。 J / SECT SIM / 430 A / SPL SIM / 430 A / CM / SUP 2 /以5,7和10 QD堆叠测量的宽面积激光器。

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来源
《Optical Fiber Communication Conference》|2005年||共1页
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作者
Kim H.D.; Jeong W.G.; Jang J.W.; Pyun S.H.; Hwang M.S.; Lee D.; Stevenson R.; Dapkus P.D.;
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中图分类自动化技术、计算机技术;
关键词
indium compounds; quantum dot lasers; 1.5 micron; CW operation; InGaAs-InGaAsP-InP; InGaAs/InGaAsP/InP; QD lasers; QD stacks; broad area lasers; quantum dot lasers; room temperature;

机译：铟化合物;量子点激光;1.5微米;CW操作;Ingaas-IngaAsp-inp;Ingaas / IngaAsp / InP;QD激光;QD堆叠;宽面积激光;量子点激光;室温;

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专利

1. Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature [J] . H. D. Kim, W. G. Jeong, J. H. Lee, Applied Physics Letters . 2005,第8期

机译：1.5μmInGaAs / InGaAsP / InP量子点激光器在室温下的连续波操作
2. Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-/spl mu/m InGaAsP-InP multiple-quantum-well lasers [J] . Belenky G., Reynolds C.L. Jr. IEEE Photonics Technology Letters . 2000,第8期

机译：p掺杂对FP和DFB 1.3- / splμm/ m InGaAsP-InP多量子阱激光器中差分增益的温度依赖性的影响
3. Theoretical analysis of temperature sensitivity of differential gain in 1.55-/spl mu/m InGaAsP-InP quantum-well lasers [J] . Seki S., Yokoyama K. IEEE Photonics Technology Letters . 1995,第3期

机译：1.55- / splμm/ m InGaAsP-InP量子阱激光器中微分增益对温度灵敏度的理论分析
4. 1.5 /spl mu/m InGaAs/InGaAsP/InP quantum dot lasers operating CW at room temperature [C] . Kim, H.D., Jeong, . 2005

机译：1.5 / spl mu / m InGaAs / InGaAsP / InP量子点激光器，在室温下连续工作
5. High operating temperature of passively mode-locked InGaAsP/InP semiconductor lasers [D] . Tan, Wei Kiong. 2005

机译：被动锁模InGaAsP / InP半导体激光器的高工作温度
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures [O] . Jin S R, Sweeney S J, Ahmad C N, 2004

机译：在低温和室温下高压下测量的1.3μmInGaAsP和1.5μmInGaAs量子阱激光器的辐射和俄歇复合
8. Long Wavelength (Wavelength 1.5 micrometers) Native-Oxide-Defined InAlAs-InP-InGaAsP Quantum Well Heterostructure Laser Diodes [R] . Caracci, S. J., Krames, M. R., Holonyak, N. 1994

机译：长波长（波长1.5微米）自然氧化物定义的Inalas-Inp-InGaasp量子阱异质结构激光二极管

1.5 /spl mu/m InGaAs/InGaAsP/InP quantum dot lasers operating CW at room temperature

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