首页> 外文会议>Conference on Material Science and Material Properties for Infrared Optoelectronics >Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al0.5Ga0.5As heterostructures
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Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al0.5Ga0.5As heterostructures

机译:光线和电场对P-GaAs / Al0.5Ga0.5as异质结构中压阻性的电阻率和长期松弛的影响

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The influence of light illumination and high electric field pulses on the long-term relaxation effect in piezoresistivity which has been discovered recently in p-GaAs/Al$-0.5$/Ga$-0.5$/As heterostructures has ben investigated. Significant acceleration of relaxation processes has been observed under the carriers heating by different external sources. This means that these phenomena are mostly determined by nonequilibrium processes in electron system. At 4.2 K under high electric fields switching of the samples to long-term high-resistance state has ben also found.
机译:光照明和高电场脉冲对最近在P-GaAs / Al $-$-Ga $-0.5 $ / Go $-0.5 $ /作为异质结构的压阻率中的长期松弛效果。在不同外部来源的载体中,已经观察到显着加速放松过程。这意味着这些现象主要由电子系统中的非预测过程决定。在4.2 k下,在高电场下,将样品的转换为长期的高电阻状态已经发现。

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